Display device

ABSTRACT

A display device is provided that can prevent degradation of an emission layer and improve reliability by removing moisture produced in an organic light-emitting display. The display device comprises: a thin-film transistor (TFT) array substrate where organic light-emitting diodes are formed; a color filter array substrate that faces the TFT array substrate and comprises a black matrix; and a getter layer that is disposed between the TFT array substrate and the color filter array substrate and comprises a getter pattern overlapping the black matrix.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of the Republic of Korea PatentApplication No. 10-2017-0162314 filed on Nov. 29, 2017, which isincorporated by reference in its entirety.

BACKGROUND Field of Technology

The present disclosure relates to a display device, and moreparticularly, to a display device capable of preventing a decline inreliability caused by moisture.

Related Art

With the development of the information society, various demands fordisplay devices for displaying images are on the rise. In the field ofdisplay devices, flat panel display devices (FPDs), which are thin andlight and can cover a large area, have been rapidly replacing cathoderay tubes (CRTs), which are bulky. The flat panel display devicesinclude liquid crystal displays (LCDs), plasma display panels (PDPs),organic light-emitting displays (OLEDs), electrophoretic displays (EDs),etc.

Among these types of displays, the organic light-emitting displays areself-luminous devices, and have fast response time, high light emissionefficiency, great brightness, and wide viewing angles. Notably, theorganic light-emitting displays can be fabricated on a flexible plasticsubstrate, and have advantages over plasma display panels or inorganiclight emitting displays in that they can operate at a low voltage, havelower power consumption, and deliver vivid color reproduction, ascompared to plasma display panels or inorganic electroluminescence (EL)displays.

An organic light-emitting display comprises an emission layer situatedbetween a first electrode as an anode and a second electrode as acathode. A hole from the first electrode and an electron from the secondelectrode recombine within the emission layer, forming an exciton, i.e.,a hole-electron pair. Then, energy is created as the exciton returns tothe ground state, thereby causing the organic light-emitting display toemit light. The emission layer is made of an organic material that issusceptible to moisture, and easily degrades when exposed to moisture.In order to protect the emission layer from moisture, the organiclight-emitting display comprises a getter for absorbing moisture in it.However, if the getter is opaque, it cannot be formed on a path throughwhich light is sent out, and therefore used only on the bezel around theouter edge of the organic light-emitting display. Accordingly, themoisture produced in the organic light-emitting display cannot beremoved, thus causing the emission layer to easily degrade.

SUMMARY

The present disclosure describes a display device that can preventdegradation of an emission layer and improve reliability by removingmoisture produced in an organic light-emitting display.

According to an exemplary embodiment of the present disclosure, adisplay device comprises: a thin-film transistor (TFT) array substratewhere organic light-emitting diodes are formed; a color filter arraysubstrate that faces the TFT array substrate and comprises a blackmatrix; and a getter layer that is situated between the TFT arraysubstrate and the color filter array substrate and comprises a getterpattern overlapping the black matrix.

In some embodiments, the getter layer comprises a base film, and thegetter pattern disposes on the base film.

In some embodiments, the getter layer comprises a resin layer thatdisposes on the base film and has holes or grooves.

In some embodiments, the getter layer comprises a resin layer thatdisposes on the color filter array substrate and has holes or grooves.

In some embodiments, the getter pattern fills the holes or grooves.

In some embodiments, the display device further comprises an adhesivelayer disposed between the getter layer and the color filter arraysubstrate.

In some embodiments, the getter pattern is in the shape of meshes.

In some embodiments, the getter pattern is in the shape of stripes.

In some embodiments, the getter pattern has the same shape as the blackmatrix.

In some embodiments, the thickness of the getter layer is 1 to 100 μm.

In some embodiments, the display device further comprises a sealant forholding the color filter array substrate and the TFT array substratetogether, wherein the sealant comprises a getter.

According to another exemplary embodiment of the present disclosure, adisplay device comprises: a TFT array substrate where organiclight-emitting diodes are formed; a color filter array substrate thatfaces the TFT array substrate and comprises a black matrix; and a getterpattern that is disposed between the TFT array substrate and the colorfilter array substrate and overlaps the black matrix.

In some embodiments, the thickness of the getter layer is 1 to 100 μm.

BRIEF DESCRIPTION OF DRAWINGS

The accompany drawings, which are included to provide a furtherunderstanding of the disclosure and are incorporated on and constitute apart of this specification, illustrate embodiments of the disclosure andtogether with the description serve to explain the principles of thedisclosure. In the drawings:

FIG. 1 is a schematic block diagram of an organic light-emittingdisplay, according to an embodiment.

FIG. 2 is a schematic circuit diagram of a subpixel, according to anembodiment.

FIG. 3 is an illustration of a detailed circuit diagram of a subpixel,according to an embodiment.

FIG. 4 is a top plan view of an organic light-emitting display,according to an embodiment.

FIG. 5 is a cross-sectional view of an organic light-emitting displayaccording to a first exemplary embodiment.

FIGS. 6 and 7 are cross-sectional views of a subpixel in the organiclight-emitting display according to the first exemplary embodiment.

FIGS. 8 and 9 are top plan views of a part of the organic light-emittingdisplay according to the first exemplary embodiment.

FIGS. 10 and 11 are cross-sectional views of an organic light-emittingdisplay according to a second exemplary embodiment.

FIGS. 12 and 13 are cross-sectional views of an organic light-emittingdisplay according to a third exemplary embodiment.

DETAILED DESCRIPTION

Hereinafter, exemplary embodiments of the present disclosure will bedescribed in detail with reference to the attached drawings. Throughoutthe specification, like reference numerals denote substantially likecomponents. In describing the present disclosure, a detailed descriptionof known functions or configurations related to the present disclosurewill be omitted when it is deemed that they may unnecessarily obscurethe subject matter of the present disclosure. The terms and names ofelements used herein are chosen for ease of description and may bedifferent from the names of parts used in actual products. When theposition relation between two parts is described using the terms “on,”“over,” “under,” “next to” and the like, one or more parts may bepositioned between the two parts as long as the term “immediately” or“directly” is not used.

A display device according to the present disclosure is a display devicein which display elements are formed on a glass substrate or flexiblesubstrate. Although examples of the display device comprise an organiclight-emitting display, a liquid-crystal display, and an electrophoreticdisplay, etc., the present disclosure will be described with respect toan organic light-emitting display. The organic light-emitting displaycomprises an organic layer composed of organic materials situatedbetween a first electrode as an anode and a second electrode as acathode. A hole from the first electrode and an electron from the secondelectrode recombine within the organic layer, forming an exciton, i.e.,a hole-electron pair. Then, energy is created as the exciton returns tothe ground state, thereby causing the self-luminous display to emitlight.

FIG. 1 is a schematic block diagram of an organic light-emittingdisplay, according to an embodiment. FIG. 2 is a schematic circuitdiagram of a subpixel, according to an embodiment. FIG. 3 is anillustration of a detailed circuit diagram of a subpixel, according toan embodiment. FIG. 4 is a top plan view of an organic light-emittingdisplay, according to an embodiment. FIG. 5 is a cross-sectional view ofan organic light-emitting display according to a first exemplaryembodiment. FIGS. 6 and 7 are cross-sectional views of a subpixel in theorganic light-emitting display according to the first exemplaryembodiment.

Referring to FIG. 1, an organic light-emitting display comprises animage processor 110, a timing controller 120, a data driver 130, a scandriver 140, and a display panel 150.

The image processor 110 outputs a data enable signal DE, etc., alongwith an externally supplied data signal DATA. The image processor 110may output one or more among a vertical synchronization signal,horizontal synchronization signal, and clock signal, in addition to thedata enable signal DE, but these signals are not shown in the drawingsfor convenience of explanation.

The timing controller 120 receives the data signal DATA from the imageprocessor 110, along with the data enable signal DE or driving signalsincluding the vertical synchronization signal, horizontalsynchronization signal, and clock signal. Based on the driving signals,the timing controller 120 outputs a gate timing control signal GDC forcontrolling the operation timing of the scan driver 140 and a timingcontrol signal DDC for controlling the operation timing of the datadriver 130.

In response to the data timing control signal DDC supplied from thetiming controller 120, the data driver 130 samples and latches the datasignal DATA supplied form the timing controller 120, converts it to agamma reference voltage, and outputs the gamma reference voltage. Thedata driver 130 outputs the data signal DATA through data lines DL1 toDLn. The data driver 130 may be formed in the form of an IC (integratedcircuit).

In response to the gate timing control signal GDC supplied from thetiming controller 120, the scan driver 140 outputs a scan signal. Thescan driver 140 outputs the scan signal through gate lines GL1 to GLm.The scan driver 140 is formed in the form of an IC (integrated circuit),or is formed on the display panel 150 by a gate-in-panel (GIP)technology.

The display panel 150 displays an image, corresponding to the datasignal DATA and scan signal respectively supplied from the data driver130 and scan driver 140. The display panel 150 includes subpixels SPthat display an image.

The subpixels SP comprise red subpixels, green subpixels, and bluesubpixels or comprise white subpixels, red subpixels, green subpixels,and blue subpixels. The subpixels SP may have one or more emission areasdepending on their emission characteristics.

As shown in FIG. 2, each subpixel SP comprises a switching transistorSW, a driving transistor DR, a capacitor Cst, a compensation circuit CC,and an organic light emitting diode OLED.

In response to a scan signal supplied through the first gate line GL1,the switching transistor SW is switched on so that a data signalsupplied through the first data line DL1 is stored as a data voltage ina capacitor Cst. The driving transistor DR operates so that a drivingcurrent flows between a power supply line EVDD (high-level voltage) anda cathode power supply line EVSS (low-level voltage) in response to thedata voltage stored in the capacitor Cst. The organic light-emittingdiode OLED operates to emit light by the driving current formed by thedriving transistor DR.

The compensation circuit CC is a circuit that is added into the subpixelto compensate for the threshold voltage, etc. of the driving transistorDR. The compensation circuit CC comprises one or more transistors. Thecompensation circuit CC has a wide variety of configurations dependingon the compensation method, so a detailed illustration and descriptionof this will be omitted.

As shown in FIG. 3, the compensation circuit CC comprises a sensingtransistor ST and a sensing line VREF (or a reference line). The sensingtransistor ST is connected between a source electrode of the drivingtransistor DR and the anode (hereinafter, sensing node) of the organiclight-emitting diode OLED. The sensing transistor ST operates to supplya reset voltage (or sensing voltage) delivered through the sensing lineVREF to the sensing node of the driving transistor DR or to sense avoltage or current at the source node of the driving transistor DR or atthe sensing line VREF.

A first electrode of the switching transistor SW is connected to thefirst data line DL1, and a second electrode of the switching transistorSW is connected to a gate electrode of the driving transistor DR. Afirst electrode of the driving transistor DR is connected to the powersupply line EVDD, and a second electrode of the driving transistor DR isconnected to the anode of the organic light-emitting diode OLED. A firstelectrode of the capacitor Cst is connected to the gate electrode of thedriving transistor DR, and a second electrode of the capacitor Cst isconnected to the anode of the organic light-emitting diode OLED. Theanode of the organic light-emitting diode OLED is connected to thesecond electrode of the driving transistor DR, and the cathode of theorganic light-emitting diode OLED is connected to the second powersupply line EVSS. A first electrode of the sensing transistor ST isconnected to the sensing line VREF, and a second first electrode of thesensing transistor ST is connected to the anode of the organiclight-emitting diode OLED and the second electrode of the drivingtransistor DR.

The operating time of the sensing transistor ST may be similar/identicalto the operating time of the switching transistor SW according to anexternal compensation algorithm (or the configuration of thecompensation circuit). For example, the gate electrode of the switchingtransistor SW may be connected to the first gate line GL1, and the gateelectrode of the sensing transistor ST may be connected to the secondgate line GL2. In this case, a scan signal Scan is transmitted to thefirst gate line GL1, and a sensing signal Sense is transmitted to thesecond gate line GL2. In another example, the first gate line GL1connected to the gate electrode of the switching transistor SW and thesecond gate line GL2 connected to the gate electrode of the sensingtransistor ST may be connected to be shared.

The sensing line VREF may be connected to the data driver. In this case,the data driver may sense the sensing node of the subpixel in real time,for an image non-display period or for a period of N frames (N being aninteger equal to or greater than 1) and generate a sensing result. Theswitching transistor SW and the sensing transistor ST may be turned onat the same time. In this case, a sensing operation through the sensingline VREF and a data output operation for outputting a data signal aredistinguished from each other on the basis of a time division method ofthe data driver.

A digital data signal, an analog data signal, or a gamma voltage may becompensated according to a sensing result. Also, a compensation circuitthat generates a compensation signal (or compensation voltage) based onthe sensing result may be implemented within the data driver, within thetiming controller, or as a separate circuit.

A light shielding layer LS may be formed only under the channel regionof the driving transistor DR, or may be formed under the channel regionsof the switching transistor SW and sensing transistor ST, as well asunder the channel region of the driving transistor DR. The lightshielding layer LS may be used to simply block external light or may beused as an electrode that facilitates a connection to other electrodesor lines and constitutes a capacitor, etc. Therefore, the lightshielding layer LS may be composed of multiple layers of metals(multiple layers of different metals) so as to have light shieldingproperties.

Besides, although FIG. 3 illustrates an example in which each subpixelhas a 3T(transistor)1C(capacitor) structure comprising a switchingtransistor SW, a driving transistor DR, a capacitor Cst, an organiclight-emitting diode OLED, and a sensing transistor ST, each pixel mayhave various alternative structures like 3T2C, 4T2C, 5T1C, 6T2C, etc.,for example, if the compensation circuit CC is added to the subpixel.

Referring to FIG. 4, the display panel of the organic light-emittingdisplay comprises a thin-film transistor (TFT) array substrate TSUB, acolor filter array substrate CSUB, a display area A/A, and a drivingcircuit substrate PCB.

The TFT array substrate TSUB comprises a plurality of thin-filmtransistors and a plurality of organic light-emitting diodes. The colorfilter array substrate CSUB can comprise red, green, blue, and whitecolor filters and a black matrix defining these color filters. The TFTarray substrate TSUB and the color filter array substrate CSUB are heldtogether to form the display panel.

The display area A/A is an image display area, which comprises aplurality of subpixels SP. As described above, the plurality ofsubpixels SP each comprises thin-film transistors and an organiclight-emitting diode to emit light. In some embodiments, the area otherthan the display area A/A is defined as a bezel area BZ. Gate chip-onfilms GCOF with a gate driver mounted in them and data chip-on filmsDCOF with a data driver mounted in them are arranged in the bezel areaBZ. In an example, the data chip-on films DCOF are connected to thedriving circuit substrate PCB. Thus, signals are applied from thedriving circuit substrate PCB to the data and gate chip-on films GCOFand DCOF and transmitted to the subpixels SP in the display area A/A.

Referring to FIG. 5, the organic light-emitting display according to thefirst exemplary embodiment of the present disclosure is composed of astructure in which the TFT array substrate TSUB and the color filterarray substrate CSUB are held together by a sealant SEL.

The TFT array substrate TSUB comprises a plurality of thin-filmtransistors TFT and organic light-emitting diodes OLED. The subpixels SPeach comprise a plurality of thin-film transistors TFT and an organiclight-emitting diode OLED. The color filter array substrate CSUBcomprises a black matrix BM, a plurality of color filters CF, and anovercoat layer OCL covering the black matrix BM and the color filtersCF.

A getter layer GL is situated between the TFT array substrate TSUB andthe color filter array substrate CSUB. The getter layer GL comprises aresin layer RL situated between each getter pattern GT. The getterpatterns GT are disposed to overlap the aforementioned black matrix BM.An adhesive layer ADL is situated between the getter layer GL and theTFT array substrate TSUB. A more detailed description of the getterlayer GL will be described later.

Each element will be described with reference to a cross-sectionalstructure of the area of the subpixels SP.

Referring to FIG. 6 the organic light-emitting display according to thefirst exemplary embodiment is composed of a structure in which the TFTarray substrate TSUB and the color filter array substrate CSUB are heldtogether. In the TFT array substrate TSUB, a buffer layer BUF lies on afirst substrate SUB1. The first substrate SUB1 is made of glass,plastic, or metal. The buffer layer BUF serves to protect thin-filmtransistors formed in a subsequent process from impurities such asalkali ions leaking out of the first substrate SUB1. The buffer layerBUF may be a silicon oxide (SiOx), a silicon nitride (SiNx), or multiplelayers of these compounds.

A semiconductor layer ACT lies on the buffer layer BUF. Thesemiconductor layer ACT may be made of silicon semiconductor or oxidesemiconductor. The silicon semiconductor may comprise amorphous siliconor crystallized polycrystalline polysilicon. The polycrystalline siliconhas a high mobility (for example, more than 100 cm²/Vs), low powerconsumption, and excellent reliability. Thus, the polycrystallinesilicon can be applied to a gate driver for a driving element and/or amultiplexer (MUX) or applied to a driving TFT in a pixel. Because theoxide semiconductor has a low OFF-current, the oxide semiconductor issuitable for a switching TFT which has a short ON-time and a longOFF-time. Further, because the oxide semiconductor can increase avoltage hold time of the pixel due to the low OFF-current, the oxidesemiconductor is suitable for a display device requiring low-speedoperation and/or low power consumption. In addition, the semiconductorlayer ACT comprises a drain region and a source region each includingp-type or n-type impurities, and also comprises a channel between thedrain region and the source region. The semiconductor layer ACT mayfurther comprise a low-doped region between the drain and source regionsadjacent to the channel.

A gate insulating film GI lies on the semiconductor layer ACT. The gateinsulating film GI may be silicon oxide SiOx, silicon nitride SiNx, ormultiple layers of these compounds. A gate electrode GAT lies on thegate insulating film GI, corresponding to a channel of the semiconductorlayer ACT for injecting an impurity. The gate electrode GAT acts as agate electrode of the driving transistor. The gate electrode GAT may bemade up of any one selected from the group consisting of molybdenum(Mo), aluminum (Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni),neodymium (Nd), and copper (Cu) or multiple layers of alloys of theseelements. Further, the gate electrode GAT may be a multilayer formed ofone of molybdenum (Mo), aluminum (Al), chrome (Cr), gold (Au), titanium(Ti), nickel (Ni), neodymium (Nd), copper (Cu), or alloys of theseelements. For example, the gate electrode GAT may consist of dual layersof molybdenum/aluminum-neodymium or molybdenum/aluminum.

An interlayer insulating film ILD for insulating the gate electrode GATlies on the gate electrode GAT. The interlayer insulating film ILD maybe a silicon oxide film (SiOx), a silicon nitride film (SiNx), ormultiple layers of these compounds. Contact holes CH exposing part ofthe semiconductor layer ACT are located in some regions of theinterlayer insulating film ILD. A drain electrode DE and a sourceelectrode SE lie on the interlayer insulating film ILD. The sourceelectrode SE and the drain electrode DE are connected to thesemiconductor layer ACT via the contact holes CH.

The source electrode SE and the drain electrode DE may consist of asingle layer or multiple layers. If the source electrode SE and thedrain electrode DE consist of a single layer, they may be made up of anyone selected from the group consisting of molybdenum (Mo), aluminum(Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium(Nd), and copper (Cu), or an alloy of these elements. On the other hand,if the source electrode SE and the drain electrode DE consist ofmultiple layers, they may be made up of two layers ofmolybdenum/aluminum-neodymium or three layers oftitanium/aluminum/titanium, molybdenum/aluminum/molybdenum, ormolybdenum/aluminum-neodymium/molybdenum. As such, a thin filmtransistor TFT comprising the semiconductor layer ACT, the gateelectrode GA, the drain electrode DE, and the source electrode SE isformed.

A planarization layer OC lies on the first substrate SUB1 comprising thethin-film transistor TFT. The planarization layer OC is used forsmoothing out irregularities on the underlying structure, and is made ofan organic material such as polyimide, benzocyclobutene-based resin,acrylate, etc.

A via hole VIA exposing the source electrode SE is located in someregion of the planarization layer OC. A first electrode ANO lies on theplanarization layer OC. The first electrode ANO may act as a pixelelectrode and is connected to the source electrode SE of the thin-filmtransistor TFT via the via hole VIA. The first electrode ANO is ananode, and may be made of a transparent conductive material, forexample, ITO (indium tin oxide), IZO (indium zinc oxide), or ZnO (zincoxide). If the first electrode ANO is a reflective electrode, the firstelectrode ANO may further comprise a reflective layer. The reflectivelayer may be made of aluminum (Al), copper (Cu), silver (Ag), nickel(Ni), or an alloy of these elements, for example, APC(silver/palladium/copper alloy).

In some embodiments, a bank layer BNK for defining a pixel lies on thefirst substrate SUB1 comprising the first electrode ANO. The bank layerBNK is made of an organic material such as polyimide,benzocyclobutene-based resin, acrylate, etc. The bank layer BNK has anopen portion OP exposing the first electrode ANO. An emission layer EMLmaking contact with the first electrode ANO is located in the openportion OP. The emission layer EML is a layer that emits light by therecombination of electrons and holes. A hole injection layer or holetransport layer may be formed between the emission layer EML and thefirst electrode ANO, and an electron transport layer or electroninjection layer may be formed on the emission layer EML.

A second electrode CAT lies on the emission layer EML. The secondelectrode CAT is located on the entire surface of the display area A/Aand is a cathode, which may be made of magnesium (Mg), calcium (Ca),aluminum (Al), silver (Ag), or an alloy thereof that has a low workfunction. If the second electrode CAT is a transmissive electrode, itmay be made thin enough to pass light through. If the second electrodeCAT is a reflective electrode, it may be made thick enough to reflectlight. Although not shown, a passivation film may lie on the secondelectrode CAT. Thus, the TFT array substrate TSUB is configured.

The TFT array substrate TSUB is bonded to the color filter arraysubstrate CSUB through the adhesive layer ADL. In the color filter arraysubstrate CSUB, a black matrix BM is located on one surface of a secondsubstrate SUB2. The second substrate SUB2 is made of glass, plastic, ormetal, and the second substrate SUB2 may be made of transparent glass orplastic through which light can pass. The black matrix BM is used forshielding the light emitted from other regions than the subpixels SP.The black matrix BM contains a light-absorbing material—for example,carbon black. Color filters can be arranged in the regions defined bythe black matrix BM. The color filters CF convert white light emittedfrom the emission layer EML into red, green, and blue light, andcomprise red color filters R, green color filters G, and blue colorfilters (not shown). The white light emitted from the emission layer EMLpasses through the regions where there are no color filters CF, therebyproducing white light. Therefore, the organic light-emitting display mayhave a total of four subpixels of red, green, blue, and white. However,the present disclosure is not limited to this, and the subpixels may beprovided in three colors but not in white. An overcoat layer OCL forprotecting the color filters CF and the black matrix BM lies on onesurface of the color filters CF and black matrix BM to configure thecolor filter array substrate CSUB. The TFT array substrate TSUB and thecolor filter array substrate CSUB are held together through the adhesivelayer ADL.

A getter layer GL is situated between the TFT array substrate TSBU andthe color filter array substrate CSUB. The getter layer GL is used forabsorbing moisture produced in the display device, and comprises agetter patter GT comprising a getter.

More specifically, the getter layer GL according to an exemplaryembodiment of the present disclosure may comprise a getter pattern GTand a resin layer RL surrounding the getter pattern GT.

The getter pattern GT is formed of a getter composition containing agetter, a binder, and a solvent. The getter is a material that canabsorb moisture—for example, one selected from the group consisting ofcalcium oxide, magnesium oxide, strontium oxide, aluminum oxide, bariumoxide, calcium chloride, potassium carbonate, potassium hydroxide,sodium hydroxide, lithium hydroxide, lithium sulfate, sodium sulfate,calcium sulfate, magnesium sulfate, cobalt sulfate, gallium sulfate,titanium sulfate, nickel sulfate, phosphorus pentoxide, and mixturesthereof.

The binder is used for fixing the getter and adjusting the viscosity ofthe composition, and may be one selected from the group consisting ofacrylic resin, polyimide resin, phenol resin, cardo resin, andethylcellulose resin. Additionally, these resins may be compoundscontaining an acid group or epoxy group.

The solvent may be used for dispersing the above-mentioned getter andbinder and adjusting the viscosity of the composition. The solvent maybe one selected from the group consisting of: water; alcohols such asethanol, methanol, isopropyl alcohol, butanol, 2-ethylhexyl alcohol,methoxy pentanol, butoxy ethanol, ethoxyethoxy ethanol, butoxyethoxyethanol, methoxypropoxy propanol, texanol, and terpineol (e.g.,α-terpineol); tetrahydrofuran (THF); glycerol; alkylene glycol such asethylene glycol, triethylene glycol, polyethylene glycol, propyleneglycol, dipropylene glycol, dihexylene glycol, or alkyl ethers thereof(e.g., propylene glycol methyl ether (PGME), diethylene glycol butylether, diethylene glycol ethyl ether, and dipropylene glycol methylether, dihexylene glycol ethyl ether); glycerin,N-methyl-2-pyrrolidinone (NMP), 2-pyrrolidone, acetylacetone,1,3-dimethylimidazolinone, thiodiglycol, dimethyl sulfoxide (DMSO),N,N-dimethyl acetamide (DMAc), dimethylformamide (DMF)), sulfolane,diethanolamine, and triethanolamine, and ketones such as methyl ethylketone and cyclopentanone; aromatic compounds such as xylene, toluene,and benzene; ethers such as dipropylene methyl ether; and aliphatichydrocarbons such as methylene chloride and chloroform, or at least twothereof may be used in combination.

The resin layer RL surrounding the getter pattern GT may be made of aphotoresist which becomes insoluble or soluble to a specific solutionwhen exposed to light. The getter pattern GT appears to fill holes RCHformed in the resin layer RL.

The getter layer GL comprising the aforementioned getter pattern GT andresin layer RL may be formed as follows. A photoresist is applied ontothe color filter array substrate CSUB where the color filters CF, blackmatrix BM, and overcoat layer OCL are formed, and holes RCH are formedin regions overlapping the black matrix BM to form the resin layer RL.For example, if the photoresist is negative type, the holes RCH may beformed by exposing the photoresist to light in the regions that overlapthe black matrix BM and developing it. Contrariwise, if the photoresistis positive type, the holes RCH may be formed by exposing thephotoresist to light in the regions other than the regions overlappingthe black matrix BM and developing it. The getter pattern GT is formedin the holes RCH of the resin layer RL by applying the gettercomposition onto the resin layer RL by squeezing. Accordingly, thegetter layer GL may be formed on the color filter array substrate CSUB.On the contrary, as shown in FIG. 7, the getter pattern GT may be formedby forming grooves RGR, instead of the holes, in the resin layer RL andfilling the getter composition in the grooves RGR.

The getter layer GL may be 1 to 100 μm thick. If the getter layer GL is1 μm thick or greater, the quantity of the getter may be increased andabsorb moisture produced in the display device. If the getter layer GLis 100 μm or less, holes or grooves may be formed easily in the resinlayer RL even though the width of the getter pattern GT is limited.

If the getter of the aforementioned getter layer GL is opaque, it cannotbe formed on a path through which light is sent out, and, even if it istransparent, decreases transmission. Thus, the getter pattern GT of thepresent disclosure is disposed to overlap the black matrix BM.

FIGS. 8 and 9 are top plan views of a part of the organic light-emittingdisplay according to the first exemplary embodiment. The organiclight-emitting display of FIG. 5 may be depicted as in FIGS. 8 and 9when viewed from above.

The black matrix BM can be defined by R, G, B, and W subpixels, andlight from each subpixel is not emitted but absorbed by the black matrixBM in the region where the black matrix BM is placed. For example, theblack matrix BM has the shape of meshes that define the subpixels. Thegetter pattern GT of the present disclosure has the same shape as theblack matrix BM while overlapping it. That is, the getter pattern GT hassuch a shape in which R, G, B, and W subpixels can be defined. Forexample, the getter pattern GT may be in the shape of meshes.Accordingly, the getter pattern GT is not located on the path of lightemitted from the subpixels, whereby the aperture ratio is not affected.

As shown in FIG. 9, the black matrix BM is in the shape of meshes thatcan define the subpixels, while the getter pattern GT may be in theshape of stripes. The getter pattern GT of the present disclosure mayhave any shape as long as the aperture ratio is not decreased when itoverlaps the black matrix BM.

In the organic light-emitting display device according to the presentdisclosure, the adhesive layer ADL is formed between the color filterarray substrate CSUB and TFT array substrate TSUB where the getter layerGL is formed, thereby joining these substrates together. As shown inFIG. 5, a sealant SEL is formed on the edges of the color filter arraysubstrates CSUB and TFT array substrate TSUB, thereby joining thesesubstrates together. In particular, the aforementioned getter iscontained in the sealant SEL so that it can absorb moisture permeatingfrom the outside.

As described above, the organic light-emitting display device accordingto an exemplary embodiment of the present disclosure may absorb moistureproduced in it, without affecting the aperture ration, by forming agetter pattern in it in such a manner as to overlap the black matrix.Accordingly, the reliability of the organic light-emitting display maybe improved.

The organic light-emitting display of the present disclosure may havevarious structures depending on the manufacturing method of the getterlayer.

FIGS. 10 and 11 are cross-sectional views of an organic light-emittingdisplay according to a second exemplary embodiment. FIGS. 12 and 13 arecross-sectional views of an organic light-emitting display according toa third exemplary embodiment. In what follows, the same components asthe above-described exemplary embodiment will be denoted by the samereference numerals, and a description of them will be omitted.

Referring to FIG. 10, in the organic light-emitting display according tothe second exemplary embodiment, a getter layer GL is situated betweenthe TFT array substrate TSBU and the color filter array substrate CSUB.The getter layer GL is used for absorbing moisture produced in thedisplay device, and comprises a getter patter GT comprising a getter.

More specifically, the getter layer GL according to the presentdisclosure may be a type of film that comprises a base film BF and agetter pattern GT and resin layer RL that lie over the base film BF.

The getter pattern GT and the resin layer RL lie over the base film BF.The base film BF is a transparent support film that may be made of awell-known material such as polycarbonate (PC), polyethyleneterephthalate (PET), polypropylene (PP), and polyethylene (PE). Theresin layer RL overlying the base film BF has holes RCH formed in theresin layer RL, and a getter composition fills the holes RCH to form thegetter pattern GT.

The organic light-emitting display comprising the aforementionedfilm-type getter layer GL may be manufactured as follows. A photoresistis applied onto a base film BF and exposed to light and developed toform holes RCH, thereby forming a resin layer RL. A getter compositionis applied onto the resin layer RL by squeezing to form a getter patternGT. The film-type getter layer GL thus made is bonded onto a TFT arraysubstrate through an adhesive layer ADL. Then, the color filter arraysubstrate CSUB and the TFT array substrate TSUB are held togetherthrough the adhesive layer ADL, thereby manufacturing an organiclight-emitting display.

On the other hand, as shown in FIG. 11, an organic light-emittingdisplay may be manufactured by bonding the film-type getter layer GLonto the color filter array substrate CSUB through the adhesive layerADL and then joining the TFT array substrate TSUB and the color filterarray substrate CSUB. The aforementioned film-type getter layer GL shownin FIGS. 10 and 11 may be made in any way as long as the substrates areheld together in such a manner that the getter pattern Gt overlaps theblack matrix BM.

As described above, the organic light-emitting display according to thesecond exemplary embodiment of the present disclosure may improveproductivity by facilitating the process since a getter layer is formedas a film type.

Referring to FIG. 12, an organic light-emitting display according to thethird exemplary embodiment of the present disclosure has a getterpattern GT situated between the TFT array substrate TSBU and the colorfilter array substrate CSUB. The getter pattern GT is used for absorbingmoisture produced in the display device, and comprises a getter forabsorbing moisture.

Unlike the getter layers in the first and second exemplary embodiments,the getter layer according to the third exemplary embodiment of thepresent disclosure is composed solely of a getter pattern GT. The getterpattern GT lies on the overcoat layer OCL of the color filter arraysubstrate CSUB and overlaps the black matrix BM.

The aforementioned getter pattern GT may be made as follows. A gettercomposition is printed onto the color filter array substrate CSUB wherethe overcoat layer OCL is formed, by using a nozzle printing machine. Inthis case, the getter pattern GT is formed by printing the gettercomposition in such a manner as to overlap the black matrix BM. Thecolor filter array substrate CSUB thus made is bonded to the TFT arraysubstrate TSUB through an adhesive layer ADL, thereby manufacturing anorganic light-emitting display.

On the other hand, as shown in FIG. 13, an organic light-emittingdisplay may be manufactured by printing the getter pattern GT onto theTFT array substrate TSUB where an inorganic passivation film IPAS isformed and then bonding it to the color filter array substrate CSUBthrough the adhesive layer ADL. The aforementioned getter pattern GTshown in FIGS. 12 and 13 may be made in any way as long as thesubstrates are held together in such a manner that the getter pattern GToverlaps the black matrix BM.

As described above, the organic light-emitting display according to thethird exemplary embodiment of the present disclosure may improveproductivity by simplifying the structure and facilitating the processsince a getter pattern is formed by a printing method.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the scope of the principles of thisdisclosure. More particularly, various variations and modifications arepossible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, thedrawings, and the appended claims. In addition to variations andmodifications in the component parts and/or arrangements, alternativeuses will also be apparent to those skilled in the art.

What is claimed is:
 1. A display device comprising: a thin-film transistor (TFT) array substrate where organic light-emitting diodes are formed; a color filter array substrate that faces the TFT array substrate and comprises a black matrix; and a getter layer that is situated between the TFT array substrate and the color filter array substrate and comprises a getter pattern overlapping the black matrix, wherein the getter pattern is in a shape of meshes or in a shape of stripes.
 2. The display device of claim 1, wherein the getter layer comprises a base film, and the getter pattern lies over the base film.
 3. The display device of claim 2, wherein the getter layer comprises a resin layer that is disposed on the base film and has holes or grooves.
 4. The display device of claim 1, wherein the getter layer comprises a resin layer that disposed on the color filter array substrate and has holes or grooves.
 5. The display device of claim 3, wherein the getter pattern fills the holes or grooves.
 6. The display device of claim 1, further comprising an adhesive layer disposed between the getter layer and the color filter array substrate.
 7. The display device of claim 1, wherein the getter pattern has a same shape as the black matrix.
 8. The display device of claim 1, wherein a thickness of the getter layer is 1 to 100 μm.
 9. The display device of claim 1, further comprising a sealant for bonding the color filter array substrate and the TFT array substrate together, wherein the sealant comprises the getter.
 10. A display device comprising: a thin-film transistor (TFT) array substrate where organic light-emitting diodes are formed; a color filter array substrate that faces the TFT array substrate and comprises a black matrix; and a getter pattern that is disposed between the TFT array substrate and the color filter array substrate and overlaps the black matrix, wherein the getter pattern has a same shape as the black matrix.
 11. The display device of claim 10, wherein a thickness of the getter pattern is 1 to 100 μm. 